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hal525, hal535 hall effect sensor ic edition aug. 30, 2000 6251-465-3ds micr onas micronas
hal525, hal535 2 micronas contents page section title 3 1. introduction 3 1.1. features 3 1.2. family overview 4 1.3. marking code 4 1.4. operating junction temperature range 4 1.5. hall sensor package codes 4 1.6. solderability 5 2. functional description 6 3. specifications 6 3.1. outline dimensions 6 3.2. dimensions of sensitive area 6 3.3. positions of sensitive areas 7 3.4. absolute maximum ratings 7 3.5. recommended operating conditions 8 3.6. electrical characteristics 9 3.7. magnetic characteristics overview 14 4. type description 14 4.1. hal525 16 4.2. hal535 18 5. application notes 18 5.1. ambient temperature 18 5.2. extended operating conditions 18 5.3. start-up behavior 18 5.4. emc and esd 20 6. data sheet history
hal525, hal535 micronas 3 hall effect sensor family release note: revision bars indicate significant changes to the previous edition. 1. introduction the hal525 and hal535 are hall switches produced in cmos technology. the sensors include a tempera- ture-compensated hall plate with active offset com- pensation, a comparator, and an open-drain output transistor. the comparator compares the actual mag- netic flux through the hall plate (hall voltage) with the fixed reference values (switching points). accordingly, the output transistor is switched on or off. the active offset compensation leads to magnetic parameters which are robust against mechanical stress effects. in addition, the magnetic characteristics are constant in the full supply voltage and temperature range. the sensors are designed for industrial and automo- tive applications and operate with supply voltages from 3.8 v to 24 v in the ambient temperature range from - 40 c up to 150 c. the hal525 and hal535 are available in the smd-package sot-89b and in the leaded version to-92ua. 1.1. features C switching offset compensation at typically 115 khz C operates from 3.8 v to 24 v supply voltage C operates with static magnetic fields and dynamic magnetic fields up to 10 khz C overvoltage protection at all pins C reverse-voltage protection at v dd -pin C magnetic characteristics are robust against mechanical stress effects C short-circuit protected open-drain output by thermal shut down C constant switching points over a wide supply voltage range C the decrease of magnetic flux density caused by ris- ing temperature in the sensor system is compen- sated by a built-in negative temperature coefficient of the magnetic characteristics C ideal sensor for window lifter, ignition timing, and revolution counting in extreme automotive and industrial environments C emc corresponding to din 40839 1.2. family overview both sensors have a latching behavior with typically the same sensitivity. the difference between hal 525 and hal535 is the temperature coefficient of the mag- netic switching points. latching sensors: both sensors have a latching behavior and requires a magnetic north and south pole for correct functioning. the output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. the out- put does not change if the magnetic field is removed. for changing the output state, the opposite magnetic field polarity must be applied. type switching behavior typical temperature coefficient see page 525 latching - 2000 ppm/k 14 535 latching - 1000 ppm/k 16
hal525, hal535 4 micronas 1.3. marking code all hall sensors have a marking on the package sur- face (branded side). this marking includes the name of the sensor and the temperature range. 1.4. operating junction temperature range the hall sensors from micronas are specified to the chip temperature (junction temperature t j ). a: t j = - 40 c to +170 c k: t j = - 40 c to +140 c e: t j = - 40 c to +100 c the relationship between ambient temperature (t a ) and junction temperature is explained in section 5.1. on page 18. 1.5. hall sensor package codes hall sensors are available in a wide variety of packag- ing versions and quantities. for more detailed informa- tion, please refer to the brochure: ordering codes for hall sensors. 1.6. solderability all packages: according to iec68-2-58 during soldering reflow processing and manual reworking, a component body temperature of 260 c should not be exceeded. components stored in the original packaging should provide a shelf life of at least 12 months, starting from the date code printed on the labels, even in environ- ments as extreme as 40 c and 90% relative humidity. fig. 1C1: pin configuration type temperature range a k e hal525 525a 525k 525e hal535 535a 535k 535e halxxxpa-t temperature range: a, k, or e package: sf for sot-89b ua for to-92ua type: 525 or 535 example: hal525ua-e ? type: 525 ? package: to-92ua ? temperature range: t j = - 40 c to +100 c 1 v dd 2gnd 3 out
hal525, hal535 micronas 5 2. functional description the hall effect sensor is a monolithic integrated circuit that switches in response to magnetic fields. if a mag- netic field with flux lines perpendicular to the sensitive area is applied to the sensor, the biased hall plate forces a hall voltage proportional to this field. the hall voltage is compared with the actual threshold level in the comparator. the temperature-dependent bias increases the supply voltage of the hall plates and adjusts the switching points to the decreasing induc- tion of magnets at higher temperatures. if the magnetic field exceeds the threshold levels, the open drain out- put switches to the appropriate state. the built-in hys- teresis eliminates oscillation and provides switching behavior of output without bouncing. magnetic offset caused by mechanical stress is com- pensated for by using the switching offset compensa- tion technique. therefore, an internal oscillator pro- vides a two phase clock. the hall voltage is sampled at the end of the first phase. at the end of the second phase, both sampled and actual hall voltages are averaged and compared with the actual switching point. subsequently, the open drain output switches to the appropriate state. the time from crossing the mag- netic switching level to switching of output can vary between zero and 1/f osc . shunt protection devices clamp voltage peaks at the output-pin and v dd -pin together with external series resistors. reverse current is limited at the v dd -pin by an internal series resistor up to - 15 v. no external reverse protection diode is needed at the v dd -pin for reverse voltages ranging from 0 v to - 15 v. fig. 2C1: hal525, hal535 block diagram fig. 2C2: timing diagram reverse voltage & overvoltage protection temperature dependent bias hysteresis control short circuit and overvoltage hall plate switch comparator output clock protection 3 out gnd 2 1 v dd t v ol v out 1/f osc = 9 m s v oh b b on f osc t t t f t i dd t
hal525, hal535 6 micronas 3. specifications 3.1. outline dimensions fig. 3C1: plastic small outline transistor package (sot-89b) weight approximately 0.035 g dimensions in mm 3.2. dimensions of sensitive area 0.25 mm 0.12 mm 3.3. positions of sensitive areas fig. 3C2: plastic transistor single outline package (to-92ua) weight approximately 0.12 g dimensions in mm note: for all package diagrams, a mechanical toler- ance of 0.05 mm applies to all dimensions where no tolerance is explicitly given. the improvement of the to-92ua package with the reduced tolerances will be introduced end of 2001. sot-89b to-92ua x center of the package center of the package y 0.95 mm nominal 1.0 mm nominal 4.55 1.7 min. 0.25 2.55 0.4 0.4 0.4 1.5 3.0 0.06 0.04 branded side spgs0022-5-a3/2e y 123 4 0.2 0.15 0.3 2 ? 0.2 sensitive area top view 1.15 0.75 0.2 3.1 0.2 0.55 branded side 0.36 0.8 0.3 45 y 14.0 min. 1.27 1.27 2.54 123 0.42 1.5 4.06 0.1 3.05 0.1 0.48 spgs7002-9-a/2e ? 0.4 sensitive area
hal525, hal535 micronas 7 3.4. absolute maximum ratings stresses beyond those listed in the absolute maximum ratings may cause permanent damage to the device. this is a stress rating only. functional operation of the device at these or any other conditions beyond those indicated in the recommended operating conditions/characteristics of this specification is not implied. exposure to absolute maximum ratings conditions for extended periods may affect device reliability. 3.5. recommended operating conditions symbol parameter pin name min. max. unit v dd supply voltage 1 - 15 28 1) v - v p test voltage for supply 1 - 24 2) - v - i dd reverse supply current 1 - 50 1) ma i ddz supply current through protection device 1 - 200 3) 200 3) ma v o output voltage 3 - 0.3 28 1) v i o continuous output on current 3 - 50 1) ma i omax peak output on current 3 - 250 3) ma i oz output current through protection device 3 - 200 3) 200 3) ma t s storage temperature range - 65 150 c t j junction temperature range - 40 - 40 150 170 4) c 1) as long as t j max is not exceeded 2) with a 220 w series resistance at pin 1 corresponding to the test circuit (see fig. 5C1) 3) t<2 ms 4) t<1000 h symbol parameter pin name min. max. unit v dd supply voltage 1 3.8 24 v i o continuous output on current 3 0 20 ma v o output voltage (output switched off) 3024v
hal525, hal535 8 micronas 3.6. electrical characteristics at t j = - 40 c to +170 c , v dd = 3.8 v to 24 v, as not otherwise specified in conditions. typical characteristics for t j = 25 c and v dd = 12 v fig. 3C3: recommended pad size sot-89b dimensions in mm symbol parameter pin no. min. typ. max. unit conditions i dd supply current 1 2.3 3 4.2 ma t j = 25 c i dd supply current over temperature range 1 1.6 3 5.2 ma v ddz overvoltage protection at supply 1 - 28.5 32 v i dd = 25 ma, t j = 25 c, t = 20 ms v oz overvoltage protection at output 3 - 28 32 v i oh = 25 ma, t j = 25 c, t = 20 ms v ol output voltage 3 - 130 280 mv i ol = 20 ma, t j = 25 c v ol output voltage over temperature range 3 - 130 400 mv i ol = 20 ma i oh output leakage current 3 - 0.06 0.1 m a output switched off, t j = 25 c, v oh = 3.8 to 24 v i oh output leakage current over temperature range 3 -- 10 m a output switched off, t j 150 c, v oh = 3.8 to 24v f osc internal oscillator chopper frequency - 95 115 - khz t j = 25 c, f osc internal oscillator chopper frequency over temperature range - 85 115 - khz t j = - 30 c to 100 c f osc internal oscillator chopper frequency over temperature range - 73 115 - khz t en(o) enable time of output after setting of v dd 1 - 30 70 m sv dd = 12 v b > b on + 2 mt or b < b off - 2 mt t r output rise time 3 - 75 400 ns v dd = 12 v, r l = 820 ohm, c l = 20 pf t f output fall time 3 - 50 400 ns r thjsb case sot-89b thermal resistance junction to substrate backside -- 150 200 k/w fiberglass substrate 30 mm x 10 mm x 1.5 mm, pad size (see fig. 3C3) r thja case to-92ua thermal resistance junction to soldering point -- 150 200 k/w 5.0 2.0 2.0 1.0
hal525, hal535 micronas 9 3.7. magnetic characteristics overview at t j = - 40 c to +170 c, v dd = 3.8 v to 24 v, typical characteristics for v dd = 12 v magnetic flux density values of switching points. positive flux density values refer to the magnetic south pole at the branded side of the package. note: for detailed descriptions of the individual types, see pages 14 and following. sensor parameter on point b on off point b off hysteresis b hys unit switching type t j min. typ. max. min. typ. max. min. typ. max. hal525 - 40 c 11.8 15.8 19.2 - 19.2 - 15.8 - 11.8 27.4 31.6 35.8 mt latching 25 c111417 - 17 - 14 - 11 24 28 32 mt 170 c5 8.5 13 - 13 - 8.5 - 5121725mt hal535 - 40 c121518 - 18 - 15 - 12 25 30 35 mt latching 25 c 11 13.8 17 - 17 - 13.8 - 11 23 27.6 32 mt 170 c 6 12 18 - 18 - 12 - 6172431mt
hal525, hal535 10 micronas C15 C10 C5 0 5 10 15 20 25 C15C10 C5 0 5 10 15 20 25 30 35 v ma v dd i dd t a = C40 c t a = 25 c t a = 170 c hal 525, hal 535 fig. 3C4: typical supply current versus supply voltage 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 12345678 v ma v dd i dd t a = C40 c t a = 25 c t a = 170 c t a = 100 c hal 525, hal 535 fig. 3C5: typical supply current versus supply voltage 0 1 2 3 4 5 C50 0 50 100 150 200 c ma t a i dd v dd = 3.8 v v dd = 12 v v dd = 24 v hal 525, hal 535 fig. 3C6: typical supply current versus ambient temperature 0 20 40 60 80 100 120 140 160 C50 0 50 100 150 200 c khz t a f osc v dd = 3.8 v v dd = 4.5 v...24 v hal 525, hal 535 fig. 3C7: typ. internal chopper frequency versus ambient temperature
hal525, hal535 micronas 11 0 50 100 150 200 250 300 350 400 0 5 10 15 20 25 30 v mv v dd v ol t a = C40 c t a = 25 c t a = 170 c i o = 20 ma t a = 100 c hal 525, hal 535 fig. 3C8: typical output low voltage versus supply voltage 0 100 200 300 400 500 600 34567 v mv v dd v ol t a = C40 c t a = 25 c t a = 170 c i o = 20 ma t a =100 c hal 525, hal 535 fig. 3C9: typical output low voltage versus supply voltage 0 100 200 300 400 C50 0 50 100 150 200 c mv t a v ol v dd = 3.8 v v dd = 4.5 v v dd = 24 v i o = 20 ma hal 525, hal 535 fig. 3C10: typical output low voltage versus ambient temperature 15 20 25 30 35 v a v oh i oh t a = C40 c t a = 170 c t a = 150 c t a = 100 c t a = 25 c 10 C6 10 C5 10 C4 10 C3 10 C2 10 C1 10 0 10 1 10 2 10 3 10 4 hal 525, hal 535 fig. 3C11: typ. output high current versus output voltage
hal525, hal535 12 micronas C50 0 50 100 150 200 c m a t a i oh v oh = 24 v v oh = 3.8 v 10 C5 10 C4 10 C3 10 C2 10 C1 10 0 10 1 10 2 hal 525, hal 535 fig. 3C12: typical output leakage current versus ambient temperature C30 C20 C10 0 10 20 30 0.01 0.10 1.00 10.00 100.00 1000.00 db m a f i dd v dd = 12 v t a = 25 c quasi-peak- measurement max. spurious signals 1 10 100 1000 mhz hal 525, hal 535 fig. 3C13: typ. spectrum of supply current db m v 0 10 20 30 40 50 60 70 80 0.01 0.10 1.00 10.00 100.00 1000.00 1 10 100 1000 mhz f v dd v p = 12 v t a = 25 c quasi-peak- measurement test circuit max. spurious signals hal 525, hal 535 fig. 3C14: typ. spectrum of supply voltage
hal525, hal535 micronas 13
hal525 14 micronas 4. type description 4.1. hal525 the hal525 is a latching sensor (see fig. 4C1). the output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. the out- put does not change if the magnetic field is removed. for changing the output state, the opposite magnetic field polarity must be applied. for correct functioning in the application, the sensor requires both magnetic polarities (north and south) on the branded side of the package. magnetic features: C switching type: latching C low sensitivity Ctypical b on : 14 mt at room temperature Ctypical b off : - 14 mt at room temperature C operates with static magnetic fields and dynamic magnetic fields up to 10 khz C typical temperature coefficient of magnetic switching points is - 2000 ppm/k applications the hal525 is the optimal sensor for applications with alternating magnetic signals such as: C multipole magnet applications, C rotating speed measurement, C commutation of brushless dc motors, and C window lifter. fig. 4C1: definition of magnetic switching points for the hal525 magnetic characteristics at t j = - 40 c to +170 c, v dd = 3.8 v to 24 v, typical characteristics for v dd = 12 v magnetic flux density values of switching points. positive flux density values refer to the magnetic south pole at the branded side of the package. the hysteresis is the difference between the switching points b hys = b on - b off the magnetic offset is the mean value of the switching points b offset = (b on + b off ) / 2 b off b on 0 v ol v o output voltage b b hys parameter on point b on off point b off hysteresis b hys magnetic offset unit t j min. typ. max. min. typ. max. min. typ. max. min. typ. max. - 40 c 11.8 15.8 19.2 - 19.2 - 15.8 - 11.8 27.4 31.6 35.8 0 mt 25 c11 14 17 - 17 - 14 - 11 24 28 32 - 20 2 mt 100 c 8 11 15.5 - 15.5 - 11 - 8 18.5 22 28.7 0 mt 140 c 6.5 10 14 - 14 - 10 - 6.5 16 20 26 0 mt 170 c5 8.5 13 - 13 - 8.5 - 5121725 0 mt
hal525 micronas 15 note: in the diagram magnetic switching points ver- sus ambient temperature the curves for b on min, b on- max, b off min, and b off max refer to junction temper- ature, whereas typical curves refer to ambient temperature. C20 C15 C10 C5 0 5 10 15 20 0 5 10 15 20 25 30 v mt v dd b on b off hal525 b on b off t a = C40 c t a = 25 c t a = 170 c t a = 100 c fig. 4C2: typ. magnetic switching points versus supply voltage C20 C15 C10 C5 0 5 10 15 20 3 3.5 4.0 4.5 5.0 5.5 6.0 v mt v dd b on b off b on b off t a = C40 c t a = 25 c t a = 170 c t a = 100 c hal525 fig. 4C3: typ. magnetic switching points versus supply voltage C20 C15 C10 C5 0 5 10 15 20 C50 0 50 100 150 200 c mt t a , t j b on b off b on max b on min b off max b off min v dd = 4.5 v...24 v v dd = 3.8 v b on typ b off typ hal525 fig. 4C4: magnetic switching points versus temperature
hal535 16 micronas 4.2. hal535 the hal535 is a latching sensor (see fig. 4C5). the output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. the out- put does not change if the magnetic field is removed. for changing the output state, the opposite magnetic field polarity must be applied. for correct functioning in the application, the sensor requires both magnetic polarities (north and south) on the branded side of the package. magnetic features: C switching type: latching C low sensitivity Ctypical b on : 13.5 mt at room temperature Ctypical b off : - 13.5 mt at room temperature C operates with static magnetic fields and dynamic magnetic fields up to 10 khz C typical temperature coefficient of magnetic switching points is - 1000 ppm/k applications the hal535 is the optimal sensor for applications with alternating magnetic signals such as: C multipole magnet applications, C rotating speed measurement, C commutation of brushless dc motors, and C window lifter. fig. 4C5: definition of magnetic switching points for the hal535 magnetic characteristics at t j = - 40 c to +170 c, v dd = 3.8 v to 24 v, typical characteristics for v dd = 12 v magnetic flux density values of switching points. positive flux density values refer to the magnetic south pole at the branded side of the package. the hysteresis is the difference between the switching points b hys = b on - b off the magnetic offset is the mean value of the switching points b offset = (b on + b off ) / 2 b off b on 0 v ol v o output voltage b b hys parameter on point b on off point b off hysteresis b hys magnetic offset unit t j min. typ. max. min. typ. max. min. typ. max. min. typ. max. - 40 c12 15 18 - 18 - 15 - 12 25 30 35 0 mt 25 c 11 13.8 17 - 17 - 13.8 - 11 23 27.6 32 0 mt 100 c 9 13 17 - 17 - 13 - 9 20 26 31.5 0 mt 140 c 7 12.5 17 - 17 - 12.5 - 7182531 0 mt 170 c 6 12 18 - 18 - 12 - 6172431 0 mt
hal535 micronas 17 note: in the diagram magnetic switching points ver- sus ambient temperature the curves for b on min, b on- max, b off min, and b off max refer to junction temper- ature, whereas typical curves refer to ambient temperature. C20 C15 C10 C5 0 5 10 15 20 0 5 10 15 20 25 30 v mt v dd b on b off hal 535 b on b off t a = C40 c t a = 25 c t a = 170 c t a = 100 c fig. 4C6: typ. magnetic switching points versus supply voltage C20 C15 C10 C5 0 5 10 15 20 3 3.5 4.0 4.5 5.0 5.5 6.0 v mt v dd b on b off hal 535 b on b off t a = C40 c t a = 25 c t a = 170 c t a = 100 c fig. 4C7: typ. magnetic switching points versus supply voltage C20 C15 C10 C5 0 5 10 15 20 C50 0 50 100 150 200 hal 535 c mt t a , t j b on b off b on max b on min b off max b off min v dd = 3.8 v v dd = 4.5 v... 24 v b off typ b on typ fig. 4C8: magnetic switching points versus temperature
hal525, hal535 18 micronas 5. application notes 5.1. ambient temperature due to the internal power dissipation, the temperature on the silicon chip (junction temperature t j ) is higher than the temperature outside the package (ambient temperature t a ). t j = t a + d t at static conditions, the following equation is valid: d t = i dd * v dd * r th for typical values, use the typical parameters. for worst case calculation, use the max. parameters for i dd and r th , and the max. value for v dd from the appli- cation. for all sensors, the junction temperature range t j is specified. the maximum ambient temperature t amax can be calculated as: t amax = t jmax - d t 5.2. extended operating conditions all sensors fulfill the electrical and magnetic character- istics when operated within the recommended oper- ating conditions (see page 7). supply voltage below 3.8 v typically, the sensors operate with supply voltages above 3 v, however, below 3.8 v some characteristics may be outside the specification. note: the functionality of the sensor below 3.8 v is not tested. for special test conditions, please contact mic- ronas. 5.3. start-up behavior due to the active offset compensation, the sensors have an initialization time (enable time t en(o) ) after applying the supply voltage. the parameter t en(o) is specified in the electrical characteristics (see page 8). during the initialization time, the output state is not defined and the output can toggle. after t en(o) , the out- put will be low if the applied magnetic field b is above b on . the output will be high if b is below b off . for magnetic fields between b off and b on , the output state of the hal sensor after applying v dd will be either low or high. in order to achieve a well-defined output state, the applied magnetic field must be above b onmax , respectively, below b offmin . 5.4. emc and esd for applications with disturbances on the supply line or radiated disturbances, a series resistor and a capacitor are recommended (see fig. 5C1). the series resistor and the capacitor should be placed as closely as pos- sible to the hal sensor. applications with this arrangement passed the emc tests according to the product standards din 40839). note: the international standard iso 7637 is similar to the used product standard din 40839. please contact micronas for the detailed investigation reports with the emc and esd results. fig. 5C1: test circuit for emc investigations r v 220 w v emc v p 4.7 nf v dd out gnd 1 2 3 r l 1.2 k w 20 pf
hal525, hal535 micronas 19
all information and data contained in this data sheet are without any commitment, are not to be considered as an offer for conclusion of a contract, nor shall they be construed as to create any liability. any new issue of this data sheet invalidates previous issues. product availability and delivery are exclusively subject to our respective order confirmation form; the same applies to orders based on development samples deliv- ered. by this publication, micronas gmbh does not assume responsibil- ity for patent infringements or other rights of third parties which may result from its use. further, micronas gmbh reserves the right to revise this publication and to make changes to its content, at any time, without obligation to notify any person or entity of such revisions or changes. no part of this publication may be reproduced, photocopied, stored on a retrieval system, or transmitted without the express written consent of micronas gmbh. hal525, hal535 20 micronas micronas gmbh hans-bunte-strasse 19 d-79108 freiburg (germany) p.o. box 840 d-79008 freiburg (germany) tel. +49-761-517-0 fax +49-761-517-2174 e-mail: docservice@micronas.com internet: www.micronas.com printed in germany order no. 6251-465-3ds 6. data sheet history 1. final data sheet : hal525 hall effect sensor ic, april 23, 1997, 6251-465-1ds. first release of the final data sheet. 2. final data sheet: hal525 hall effect sensor ic, march 10, 1999, 6251-465-2ds. second release of the final data sheet. major changes: C additional package sot-89b C outline dimensions for sot-89a and to-92ua changed C electrical characteristics changed C section 4.2.: extended operating conditions added C section 4.3.: start-up behavior added 3. final data sheet: hal525, hal535 hall effect sensor family, aug. 30, 2000, 6251-465-3ds. third release of the final data sheet. major changes: C new sensor hal 535 added C outline dimensions for sot-89b: reduced toler- ances C smd package sot-89a removed C temperature range "c" removed
micronas page 1 of 1 subject: data sheet concerned: supplement: edition: data sheet supplement changes: C position tolerance of the sensitive area reduced C tolerances of the outline dimensions reduced C thickness of the leadframe changed to 0.15 mm (old 0.125 mm) C sot-89a will be discontinued in december 2000 position of sensitive area note: a mechanical tolerance of 0.05 mm applies to all dimensions where no tolerance is explicitly given. position tolerance of the sensitive area is defined in the package diagram. hal 114, 115 hal 50x, 51x hal 621, 629 hal 55x, hal 56x x center of the package center of the package y 0.95 mm nominal 0.85 mm nominal min. 0.25 2.55 0.4 0.4 0.4 1.5 3.0 0.06 0.04 branded side spgs0022-5-a3/2e y 123 4 0.2 0.15 0.3 4.55 1.7 2 ? 0.2 sensitive area top view 1.15 improvement of sot-89b package hal 114, 115, 6251-456-2ds, dec. 20, 1999 hal 50x, 51x, 6251-485-1ds, feb. 16, 1999 hal 55x, 56x, 6251-425-1ds, april 6, 1999 hal 621, 629, 6251-504-1ds, feb. 3, 2000 no. 1/ 6251-531-1dss july 4, 2000 hal 11x, hal 5xx, hal 62x

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